STV40NE03L-20 n - channel 30v - 0.014 w - 40a - powerso-10 stripfet ? mosfet n typical r ds(on) = 0.014 w n exceptional dv/dt capability n low gate charge a 100 o c n application oriented characterization description this power mosfet is the latest development of stmicroelectronics unique osingle feature size ? o strip-based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications n high current, high speed switching n solenoid and relay drivers n motor control, audio amplifiers n dc-dc & dc-ac converters in high performance vrms n automotive environment (injection, abs, air-bag, lampdrivers, etc.) internal schematic diagram may 2000 1 10 powerso-10 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 30 v v dgr drain- gate voltage (r gs =20k w )30v v gs gate-source voltage 20 v i d drain current (continuous) at t c =25 o c40a i d drain current (continuous) at t c =100 o c28a i dm ( ? ) drain current (pulsed) 160 a p tot total dissipation at t c =25 o c80w derating factor 0.53 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 7 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ? ) pulse width limited by safe operating area ( 1 )i sd 40 a, di/dt 300 a/ m s, v dd v (br)dss ,t j t jmax type v dss r ds( on) i d STV40NE03L-20 30 v < 0.020 w 40 a 1/8
thermal data r thj-case r thj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 1.88 62.5 0.5 300 o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d <1%) 40 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =15v) 200 mj electrical characteristics (t j = -40 to 150 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 t c =25 o c i d =250 m av gs =0 30 27 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating t c =25 o c v ds =maxrating 1 50 m a m a i gss gate-body leakage current (v ds =0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m at c =25 o c v ds =v gs i d = 250 m a 1 0.6 1.8 2.5 3.0 v v r ds(on) static drain-source on resistance v gs =10v i d =20a t c =25 o c v gs =5v i d =20a t c =25 o c v gs =10v i d =20a v gs =5v i d =20a 0.014 0.02 0.023 0.04 0.046 w w w w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 20 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(o n) xr ds(on )ma x i d =20a 10 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 1850 450 160 2400 590 210 pf pf pf STV40NE03L-20 2/8
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd =15v i d =20a r g =4.7 w v gs =5v 25 160 33 210 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =24v i d =40a v gs =5v 29 12 14 38 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =24v i d =40a r g =4.7 w v gs =5v 25 120 155 33 160 210 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 40 160 a a v sd ( * )forwardonvoltage i sd =40a v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 40 a di/dt = 100 a/ m s v dd =20v t j = 150 o c 50 0.9 3.5 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area safe operating area thermal impedance STV40NE03L-20 3/8
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations STV40NE03L-20 4/8
normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature STV40NE03L-20 5/8
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STV40NE03L-20 6/8
dim. mm inch min. typ. max. min. typ. max. a 3.35 3.65 0.132 0.144 a1 0.00 0.10 0.000 0.004 b 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 d 9.40 9.60 0.370 0.378 d1 7.40 7.60 0.291 0.300 e 9.30 9.50 0.366 0.374 e1 7.20 7.40 0.283 0.291 e2 7.20 7.60 0.283 0.300 e3 6.10 6.35 0.240 0.250 e4 5.90 6.10 0.232 0.240 e 1.27 0.050 f 1.25 1.35 0.049 0.053 h 13.80 14.40 0.543 0.567 h 0.50 0.002 l 1.20 1.80 0.047 0.071 q 1.70 0.067 a 0 o 8 o detail oao plane seating a l a1 f a1 h a d d1 == == == e4 0.10 a e1 e3 c q a == b b detail oao seating plane == == e2 6 10 5 1 eb he m 0.25 == == 0068039-c powerso-10 mechanical data STV40NE03L-20 7/8
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com STV40NE03L-20 8/8
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